검색결과 : 9건
No. | Article |
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1 |
Selective emitter solar cell through simultaneous laser doping and grooving of silicon followed by self-aligned metal plating Wang SS, Mai L, Wenham A, Hameiri Z, Payne D, Chan C, Hallam B, Sugianto A, Chong CM, Ji JJ, Shi ZR, Wenham S Solar Energy Materials and Solar Cells, 169, 151, 2017 |
2 |
Simplified technique for calculating mismatch loss in mass production Evans R, Kim KH, Wang XY, Sugianto A, Chen XC, Chen RL, Green MA Solar Energy Materials and Solar Cells, 134, 236, 2015 |
3 |
Deep junction laser doping for contacting buried layers in silicon solar cells Hallam B, Chan C, Sugianto A, Wenham S Solar Energy Materials and Solar Cells, 113, 124, 2013 |
4 |
Use of inductively coupled plasma measurements to characterise light induced plating for silicon solar cells Yao Y, Sugianto A, Lennon AJ, Tjahjono BS, Wenham SR Solar Energy Materials and Solar Cells, 96(1), 257, 2012 |
5 |
Investigation of unusual shunting behavior due to phototransistor effect in n-type aluminum-alloyed rear junction solar cells Sugianto A, Tjahjono BS, Mai L, Wenham SR Solar Energy Materials and Solar Cells, 93(11), 1986, 2009 |
6 |
Epitaxial GaN film grown at low temperature by hydrogen-plasma assisted MOCVD Yam FK, Hassan Z, Ibrahim K, Barmawi M, Sugianto, Budiman M, Arifin P Materials Science Forum, 517, 9, 2006 |
7 |
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on GaN grown on silicon Lee YC, Hassan Z, Yam FK, Abdullah MJ, Ibrahim K, Barmawi M, Sugianto, Budiman M, Arifin P Applied Surface Science, 249(1-4), 91, 2005 |
8 |
Optical properties of GaN on Si substrate using plasma-assisted MOCVD technique in the infrared and visible regions Hashim MR, Oh SA, Ng SS, Hassan Z, Ibrahim K, Barmawi M, Sugianto, Budiman M, Arifin P Materials Science Forum, 480, 519, 2005 |
9 |
Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD Sugianto, Sani RA, Arifin P, Budiman M, Barmawi M Journal of Crystal Growth, 221, 311, 2000 |