| 1 |
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
Lim D, Han H, Choi C
Solid-State Electronics, 154, 1, 2019 |
| 2 |
Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory
Lee SH, Kwon DW, Kim S, Baek MH, Lee S, Kang J, Jang W, Park BG
Solid-State Electronics, 152, 41, 2019 |
| 3 |
Effect of Al doping on performance of ZnO thin film transistors
Dong JC, Han DD, Li HJ, Yu W, Zhang SD, Zhang X, Wang Y
Applied Surface Science, 433, 836, 2018 |
| 4 |
Hetero structure PNPN tunnel FET: Analysis of scaling effects on counter doping
Joseph HB, Singh SK, Hariharan RM, Priya PA, Kumar NM, Thiruvadigal DJ
Applied Surface Science, 449, 823, 2018 |
| 5 |
Structure properties and electrical mechanisms of Si(001)/SiO2 interface with varying Si layer thickness in nano-scale transistor
Li H, Ji A, Zhu C, Mao LF
Current Applied Physics, 18(9), 1020, 2018 |
| 6 |
Structure properties and electrical mechanisms of Si(001)/SiO2 interface with varying Si layer thickness in nano-scale transistor
Li H, Ji A, Zhu C, Mao LF
Current Applied Physics, 18(9), 1020, 2018 |
| 7 |
Improved gate bias stressing stability of IGZO thin film transistors using high-k compounded ZrO2/HfO2 nanolaminate as gate dielectric
Yang J, Yang X, Zhang YP, Che BW, Ding XW, Zhang JH
Molecular Crystals and Liquid Crystals, 676(1), 65, 2018 |
| 8 |
A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects
Raksharam, Dutta AK
Solid-State Electronics, 130, 33, 2017 |
| 9 |
A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer
Liaw YG, Liao WS, Wang MC, Lin CL, Zhou B, Gu HS, Li DS, Zou XC
Solid-State Electronics, 126, 46, 2016 |
| 10 |
Highly stable hafnium-tin-zinc oxide thin film transistors with stacked bilayer active layers
Han DS, Park JH, Kang MS, Choi DK, Park JW
Current Applied Physics, 15(2), 94, 2015 |
