검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Singular charge fluctuations at a magnetic quantum critical point Prochaska L, Li X, MacFarland DC, Andrews AM, Bonta M, Bianco EF, Yazdi S, Schrenk W, Detz H, Limbeck A, Si Q, Ringe E, Strasser G, Kono J, Paschen S Science, 367(6475), 285, 2020 |
| 2 |
Growth rate dependence of boron incorporation into BxGa1-xAs layers Detz H, MacFarland D, Zederbauer T, Lancaster S, Andrews AM, Schrenk W, Strasser G Journal of Crystal Growth, 477, 77, 2017 |
| 3 |
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors Capriotti M, Treidel EB, Fleury C, Bethge O, Ostermaier C, Rigato M, Lancaster SLC, Brunner F, Detz H, Hilt O, Wurfl J, Pogany D, Strasser G Solid-State Electronics, 125, 118, 2016 |
| 4 |
Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Alexewicz A, Alomari M, Maier D, Behmenburg H, Giesen C, Heuken M, Pogany D, Kohn E, Strasser G Solid-State Electronics, 89, 207, 2013 |
| 5 |
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Cico K, Gregusova D, Kuzmik J, Jurkovic M, Alexewicz A, Poisson MAD, Pogany D, Strasser G, Delage S, Frohlich K Solid-State Electronics, 67(1), 74, 2012 |
| 6 |
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates Alexewicz A, Ostermaier C, Henkel C, Bethge O, Carlin JF, Lugani L, Grandjean N, Bertagnolli E, Pogany D, Strasser G Thin Solid Films, 520(19), 6230, 2012 |
| 7 |
Si doping of MBE grown bulk GaAsSb on InP Detz H, Klang P, Andrews AM, Schrenk W, Strasser G Journal of Crystal Growth, 323(1), 42, 2011 |
| 8 |
Improving size distribution of InAs quantum dots for intersubband devices Andrews AM, Klang P, Krzyzanowski R, Schrambock M, Detz H, Schrenk W, Strasser G Journal of Crystal Growth, 311(7), 1799, 2009 |
| 9 |
Growth of one-dimensional III-V structures on Si nanowires and pre-treated planar Si surfaces Detz H, Klang P, Andrews AM, Lugstein A, Steinmair M, Hyun YJ, Bertagnolli E, Schrenk W, Strasser G Journal of Crystal Growth, 311(7), 1859, 2009 |
| 10 |
Low bias reactive ion etching of GaAs with a SiCl4/N-2/O-2 time-multiplexed process Golka S, Schartner S, Schrenk W, Strasser G Journal of Vacuum Science & Technology B, 25(3), 839, 2007 |