We present the growth and characterization of InAs quantum dots on AlxGa1-xAs surfaces for intersubband devices. This requires the quantum dot energy levels in the AlxGa1-xAs matrix to be above the GaAs bandedge. Using standard As-4 fluxes (beam equivalent pressure 8e-6Torr), inhomogeneous broadening of the quantum dot size distribution increases with increasing Al content in the AlxGa1-xAs matrix. Reducing the As-4 overpressure during In deposition is found to greatly improve the size distribution of the quantum dots, while producing slightly larger dots and a reduction in the density of small dots (h < 1.3 nm). Annealing at the higher standard As-4 flux for 30 s, after the reduced As-4 In deposition, produced a negligible change in the quantum dot size distribution. Utilizing surface dots on top of 30 layers of self-assembled quantum dots, the maximum quantum dot height for ground state energies above the GaAs bandedge is determined to be 2 nm for Al0.30Ga0.7As and 3 nm for Al0.45Ga0.55As. (C) 2008 Elsevier B.V. All rights reserved.