화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Characteristics of strain compensated 1.3 mu m InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
Zhang YG, Chen JX, Chen YQ, Qi M, Li AZ, Frojdh K, Stoltz B
Journal of Crystal Growth, 227, 329, 2001
2 Studies of internal structure in InGaAsP/InP-based lasers using atomic force microscopy in combination with selective etching
Kallstenius T, Smith U, Stoltz B
Journal of the Electrochemical Society, 146(2), 749, 1999