검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
The growth mechanism of GaN with different H-2/N-2 carrier gas ratios Cho YS, Hardtdegen H, Kaluza N, Steins R, Heidelberger G, Luth H Journal of Crystal Growth, 307(1), 6, 2007 |
| 2 |
Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE Steins R, Kaluza N, Hardtdegen H, Zorn M, Haberland K, Zettler JT Journal of Crystal Growth, 272(1-4), 81, 2004 |
| 3 |
MOVPE GaN growth: determination of activation energy using in-situ reflectometry Kaluza N, Steins R, Hardtdegen H, Lueth H Journal of Crystal Growth, 272(1-4), 100, 2004 |
| 4 |
MOVPE process for horizontal reactors with reduced parasitic deposition Hardtdegen H, Kaluza N, Steins R, Schmidt R, Wirtz K, Yakovlev EV, Talalaev RA, Makarov YN Journal of Crystal Growth, 272(1-4), 407, 2004 |