Journal of Crystal Growth, Vol.272, No.1-4, 81-86, 2004
Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE
In this paper we will demonstrate a new method for temperature calibration by using the in-situ measured band-gap shift of SiC in conjunction with real-time emissivity corrected pyrometry. The complete procedure for temperature calibration and real-time wafer temperature measurement on transparent substrates will be presented. (C)D 2004 Elsevier B.V. All rights reserved.
Keywords:characterization;emissivity corrected pyrometry;in-situ monitoring;wafer temperature;metalorganic vapor phase epitaxy;nitrides