검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy Syvajarvi M, Yakimova R, Kakanakova-Georgieva A, Sridhara SG, Linnarsson MK, Janzen E Journal of Crystal Growth, 237, 1230, 2002 |
| 2 |
D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC Carlsson FHC, Sridhara SG, Hallen A, Bergman JP, Janzen E Materials Science Forum, 433-4, 345, 2002 |
| 3 |
Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC Sridhara SG, Carlsson FHC, Bergman JP, Henry A, Janzen E Materials Science Forum, 353-356, 377, 2001 |
| 4 |
Proton irradiation induced defects in 4H-SiC Storasta L, Carlsson FHC, Sridhara SG, Aberg D, Bergman JP, Hallen A, Janzen E Materials Science Forum, 353-356, 431, 2001 |
| 5 |
Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC Sridhara SG, Bai S, Shigiltchoff O, Devaty RP, Choyke WJ Materials Science Forum, 338-3, 551, 2000 |
| 6 |
Differential absorption measurement of valence band splittings in 4H SiC Sridhara SG, Bai S, Shigiltchoff O, Devaty RP, Choyke WJ Materials Science Forum, 338-3, 567, 2000 |