| 1 |
Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors
Park YH, Choi JW, Chang J, Choi HJ, Koo HC
Current Applied Physics, 15, S32, 2015 |
| 2 |
Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device
Park YH, Shin SH, Song JD, Chang J, Han SH, Choi HJ, Koo HC
Solid-State Electronics, 82, 34, 2013 |
| 3 |
Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices
Miyao M, Hamaya K, Sadoh T, Itoh H, Maeda Y
Thin Solid Films, 518, S273, 2010 |
| 4 |
Low temperature formation of multi-layered structures of ferromagnetic silicide Fe3Si and Ge
Ueda K, Ando Y, Kumano M, Sadoh T, Maeda Y, Miyao M
Applied Surface Science, 254(19), 6215, 2008 |
| 5 |
Schottky barrier MOSFETs with epitaxial ferromagnetic MnAs/Si(001) source and drain: Post-growth annealing and transport characteristics
Sugiura K, Nakane R, Sugahara S, Tanaka M
Journal of Crystal Growth, 301, 611, 2007 |
