| 1 |
BaTiO3 as charge-trapping layer for nonvolatile memory applications
Huang XD, Sin JKO, Lai PT
Solid-State Electronics, 79, 285, 2013 |
| 2 |
A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs
Suligoj T, Liu H, Sin JKO, Tsui K, Chu RM, Chen KJ, Biljanovic P, Wang KL
Solid-State Electronics, 48(10-11), 2047, 2004 |
| 3 |
Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Or DCT, Lai PT, Sin JKO, Xu JP
Solid-State Electronics, 47(8), 1391, 2003 |
| 4 |
High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications
Li B, Wu ZH, Lai PT, Sin JKO, Liu BY, Zheng XR
Solid-State Electronics, 47(9), 1553, 2003 |
| 5 |
Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices
Or DCT, Lai PT, Sin JKO
Solid-State Electronics, 47(11), 2049, 2003 |
| 6 |
An interpretation of reverse current in metal/intrinsic diamond/semiconducting diamond junction diodes
Huang QA, Sun DY, Sin JKO
Applied Surface Science, 171(1-2), 57, 2001 |
| 7 |
Fabrication and characteristics of an emitter-sharpened double-gate racetrack-shaped field emitter structure
Wang BP, Tang YM, Wang C, Huang ZP, Sin JKO, Xue KX, Tong LS
Journal of Vacuum Science & Technology B, 17(2), 570, 1999 |
