A novel Horizontal Current Bipolar Transistor (HCBT) is processed with the scaled down dimensions and the improved technology. The active transistor region is built in the defect-free sidewall of the 580 nm wide n-hills in the (110) wafer, implying the reduction of the parasitic region's volume, i.e. the extrinsic base and the collector. The fabricated HCBT exhibits the cutoff frequency (f(T)) of 21.4 GHz, the maximum frequency of oscillations (f(max)) of 32.6 GHz and the collector-emitter breakdown voltage (BVCEO) of 5.6 V, which are the highest f(T) and the highest f(T)BV(CEO) product among the lateral bipolar transistors (LBTs). (C) 2004 Elsevier Ltd. All rights reserved.