| 1 |
Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations
Glowacki E, Le Royer C, Morand Y, Pedini JM, Denneulin T, Cooper D, Barnes JP, Nguyen P, Rouchon D, Hartmann JM, Gourhant O, Baylac E, Campidelli Y, Barge D, Bonnin O, Schwarzenbach W
Solid-State Electronics, 97, 82, 2014 |
| 2 |
Dynamic analysis of rapid-melting growth using SiGe on insulator
Matsumura R, Tojo Y, Kurosawa M, Sadoh T, Miyao M
Thin Solid Films, 557, 125, 2014 |
| 3 |
Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique
Valenza M, Husseini JE, Martinez F, Bawedin M, Le Royer C, Damlencourt JF
Solid-State Electronics, 70, 27, 2012 |
| 4 |
Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique
Yang HG, Wang D, Nakashima H
Thin Solid Films, 520(8), 3283, 2012 |
| 5 |
Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations
Kwak DW, Lee DW, Oh JS, Lee YH, Cho HY
Thin Solid Films, 520(17), 5593, 2012 |
| 6 |
Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing
Yang HG, Iyota M, Ikeura S, Wang D, Nakashima H
Solid-State Electronics, 60(1), 128, 2011 |
| 7 |
Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas
Dechoux N, Damlencourt JF, Rivallin P, Brianceau P, Bernasconi S, Benevent V, Vallee C, Barbe JC, Billon T, Bensahel D
Thin Solid Films, 518, S92, 2010 |
| 8 |
Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions
Yang HG, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S
Thin Solid Films, 518(9), 2342, 2010 |
| 9 |
Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation
Wang D, Nakashima H
Solid-State Electronics, 53(8), 841, 2009 |
| 10 |
High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge
Souriau L, Terzieva V, Vandervorst W, Clemente F, Brijs B, Moussa A, Meuris M, Loo R, Caymax M
Thin Solid Films, 517(1), 23, 2008 |
