검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility Saks NS, Ancona MG, Lipkin LA Materials Science Forum, 457-460, 689, 2004 |
| 2 |
Hall effect measurements in SiC buried-channel MOS devices Saks NS, Ryu SH Materials Science Forum, 457-460, 1287, 2004 |
| 3 |
High-current, NO-annealed lateral 4H-SiC MOSFETs Das MK, Chung GY, Williams JR, Saks NS, Lipkin LA, Palmour JW Materials Science Forum, 389-3, 981, 2002 |
| 4 |
Hall mobility of the electron inversion layer in 6H-SiC MOSFETs Saks NS, Mani SS, Agarwal AK, Hegde VS Materials Science Forum, 338-3, 737, 2000 |
| 5 |
Interface trap profiles near the band edges in 6H-SiC MOSFETs Saks NS, Mani SS, Agarwal AK Materials Science Forum, 338-3, 1113, 2000 |
| 6 |
Investigation of lateral RESURF, 6H-SiC MOSFETs Agarwal AK, Saks NS, Mani SS, Hegde VS, Sanger PA Materials Science Forum, 338-3, 1307, 2000 |