| 1 |
A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation
Kim TTH, Lee ZC, Do AT
Solid-State Electronics, 139, 60, 2018 |
| 2 |
Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM
Seo Y, Kim S, Ko K, Woo C, Kim M, Lee J, Kang M, Shin H
Solid-State Electronics, 140, 69, 2018 |
| 3 |
Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability
Ko K, Son D, Kang M, Shin H
Solid-State Electronics, 140, 74, 2018 |
| 4 |
A novel charge recycle read write assist technique for energy efficient and fast 20 nm 8T-SRAM array
Nayak D, Acharya DP, Rout PK, NandA U
Solid-State Electronics, 148, 43, 2018 |
| 5 |
An improved energy efficient SRAM cell for access over a wide frequency range
Nayak D, Acharya DP, Mahapatra K
Solid-State Electronics, 126, 14, 2016 |
| 6 |
Sub-threshold 10T SRAM bit cell with read/write XY selection
Feki A, Allard B, Turgis D, Lafont JC, Drissi FT, Abouzeid F, Haendler S
Solid-State Electronics, 106, 1, 2015 |
| 7 |
Analysis of static noise margin improvement for low voltage SRAM composed of nano-scale MOSFETs with ideal subthreshold factor and small variability
Tanaka C, Saitoh M, Ota K, Numata T
Solid-State Electronics, 109, 58, 2015 |
| 8 |
Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies
Bota SA, Torrens G, Verd J, Segura J
Solid-State Electronics, 111, 104, 2015 |
| 9 |
Volatile static random access memory behavior of an aromatic polyimide bearing carbazole-tethered triphenylamine moieties
Shi L, Tian GF, Ye HB, Qi SL, Wu DZ
Polymer, 55(5), 1150, 2014 |
| 10 |
A systematic study of the sharp-switching Z(2)-FET device: From mechanism to modeling and compact memory applications
Wan J, Le Royer C, Zaslavsky A, Cristoloveanu S
Solid-State Electronics, 90, 2, 2013 |
