| 1 |
Front and back side SIMS analysis of boron-doped delta-layer in diamond
Pinault-Thaury MA, Jomard F, Mer-Calfati C, Tranchant N, Pomorski M, Bergonzo P, Arnault JC
Applied Surface Science, 410, 464, 2017 |
| 2 |
Influence of the depth calibration procedure on the apparent shift of impurity depth profiles measured under conditions of long-term changes in erosion rate
Wittmaack K
Journal of Vacuum Science & Technology B, 18(1), 1, 2000 |
| 3 |
Approach for a 3-Dimensional on-Chip Quantification by Secondary-Ion Mass-Spectrometry Analysis
Gnaser H
Journal of Vacuum Science & Technology A, 15(3), 445, 1997 |
| 4 |
Information on the Monomer Sequence of Poly(Lactic Acid) and Random Copolymers of Lactic-Acid and Glycolic Acid by Examination of Static Secondary-Ion Mass-Spectrometry Ion Intensities
Shard AG, Volland C, Davies MC, Kissel T
Macromolecules, 29(2), 748, 1996 |
| 5 |
INVESTIGATIONS ON THE SURFACE AND SELVEDGE PROPERTIES OF RUBBER BLACKS AND COLOR BLACKS
ALBERS P, FREUND B, PRESCHER G, SEIBOLD K, WOLFF S
Kautschuk Gummi Kunststoffe, 48(5), 336, 1995 |
| 6 |
Secondary-Ion Mass-Spectrometry Analysis of Ultrathin Impurity Layers in Semiconductors and Their Use in Quantification, Instrumental Assessment, and Fundamental Measurements
Dowsett MG, Barlow RD, Allen PN
Journal of Vacuum Science & Technology B, 12(1), 186, 1994 |
| 7 |
Secondary-Ion Mass-Spectrometry Depth Profiling of Boron and Antimony Deltas in Silicon - Comparison of the Resolution Functions Using Oxygen Bombardment at Different Energies and Impact Angles
Wittmaack K
Journal of Vacuum Science & Technology B, 12(1), 258, 1994 |
