Codeposited delta doping distributions of B and Sb in Si, with areal densities on the order of 1 X 10(13) atoms/cm2, were used to determine the resolution functions for depth profiling of these dopants under 2 and 5 keV O2 bombardment at impact angles theta between 0-degrees (normal incidence) and 60-degrees. The resolution functions are described by the first and second moments and by the characteristic inverse slopes, which define the exponential rise and decay of the signal at the profile’s leading and trailing edges, respectively. The decay lengths lambda(d)(0-degrees) agree very well with numbers reported recently. The up-slope parameters lambda(u)(0-degrees) are the same for B and Sb (0.65 and 1.0 nm at 2 and 5 keV, respectively), but significantly smaller than the previously published data, which showed differences for B, Sb, and Ge. This discrepancy could be due to differences in roughness of the as-grown samples. Moreover, the high doping densities used in the previous work might have caused profile distortions during growth. Variations of theta between 0-degrees and 60-degrees have only a very small effect on lambda(u)(B, Sb) and on lambda(d)(B); e.g., at 5 keV lambda(d)(B)=3.3 nm at 0-degrees and 60-degrees with a broad maximum in between, where lambda(d)=3.7 nm. By contrast, lambda(d)(Sb) is quite large in the range 0-degrees less-than-or-equal-to theta less-than-or-equal-to 25-degrees, 5.6-6.0 nm, then decreases rapidly with increasing impact angle to fall below lambda(d)(B) as theta exceeds 40-degrees. Significant differences between B and Sb are also seen in the first moments [z] of the resolution function. At 5 keV, e.g., [z]Sb- [z]B varies from 3.5 nm (0-degrees) to -1.5 nm (60-degrees). The square root of the second moments can be approximated As sigma=lambda(u) + lambda(d). The difference in the angular dependence of the resolution parameters for B and Sb is thought to be due to differences in the redistribution of the two dopants within the silicon dioxide layer (theta less-than-or-equal-to 25-degrees) and the silicon suboxide (theta > 25-degrees) generated by oxygen bombardment.