화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Observation of oxygen contamination at ZnSe/GaAs interfaces using SIMS
Gard FS, Riley JD, Prince K
Applied Surface Science, 252(11), 4013, 2006
2 Surface band structure studies of Si rich reconstructions on 4H-SiC (1100)
Emtsev K, Seyller T, Ley L, Tadich A, Broekman L, Huwald E, Riley JD, Leckey RGC
Materials Science Forum, 483, 547, 2005
3 The atomic structure of the hydrogen saturated a-planes of 4H-SiC
Seyller T, Sieber N, Emtsev KV, Graupner R, Ley L, Tadich A, James D, Riley JD, Leckey RCG, Polcik M
Materials Science Forum, 457-460, 395, 2004
4 Structural and electronic properties of the 6H-SiC(0001)/Al2O3 interface prepared by atomic layer deposition
Seyller T, Gao K, Ley L, Ciobanu F, Pensl G, Tadich A, Riley JD, Leckey RCG
Materials Science Forum, 457-460, 1369, 2004
5 The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMS
Gard FS, Riley JD, Dowsett MG, Prince K
Applied Surface Science, 203, 490, 2003
6 A high-resolution photoemission study hydrogen-terminated 6H-SiC surfaces
Sieber N, Seyller T, Ley L, Polcik M, James D, Riley JD, Leckey RCG
Materials Science Forum, 389-3, 713, 2002
7 Reflection high-energy electron diffraction (RHEED) study of MBE growth of ZnSe on GaAs(111)B surfaces
Gard FS, Riley JD, Leckey R, Usher BF
Applied Surface Science, 181(1-2), 94, 2001
8 Electronic and atomic structure of an ordered silicate adlayer on hexagonal SiC
Hollering M, Sieber N, Maier F, Ristein J, Ley L, Riley JD, Leckey RCG, Leisenberger F, Netzer F
Materials Science Forum, 338-3, 387, 2000