Al2O3 films were grown by Atomic Layer Deposition (ALD) on H-terminated 6H-SiC(000 1). The films were characterized by photoelectron spectroscopy (PES) and admittance spectroscopy measurements. The Si2p core level spectra of thin films indicate an abrupt interface. A band gap of 7.0 +/- 0.1 eV was measured for the deposited Al2O3 films. The valence and conduction band offsets were determined as 2.2 +/- 0.1 and 1.8 +/- 0.1 eV, respectively. The admittance spectroscopy measurements yield an interface state density that is lower than that observed with thermally grown SiO. Al2O3 films grown on substrates prepared by other methods (wet-chemical cleaning and H-2 plasma etching) exhibit inferior interface properties which stresses the importance of a proper surface preparation.