검색결과 : 62건
No. | Article |
---|---|
1 |
Point defect concentrations in surface layers of binary oxides Riess I Solid State Ionics, 329, 95, 2019 |
2 |
Experimental and physical approaches on a novel semiconducting-ionic membrane fuel cell Mi YQ, Xia C, Zhu B, Raza R, Afzal M, Riess I International Journal of Hydrogen Energy, 43(28), 12756, 2018 |
3 |
Measuring ionic mobility in mixed-ionic-electronic-conducting nano-dimensioned thin films at near ambient temperatures Kalaev D, Tuller HL, Riess I Solid State Ionics, 319, 291, 2018 |
4 |
Role of temperature in valence change memory devices Liraz RL, Kalaev D, Ritter D, Riess I Solid State Ionics, 326, 159, 2018 |
5 |
Use of isotope exchange for determining series of elementary steps in electrocatalysis and heterogeneous catalysis Riess I Solid State Ionics, 302, 7, 2017 |
6 |
Novel method for determining the width of the electrochemically active electrode area along the triple phase boundary Beitner T, Baltianski S, Merkle R, Tsur Y, Riess I Solid State Ionics, 303, 70, 2017 |
7 |
Novel method for determining the triple phase boundary width Beitner T, Baltianski S, Riess I, Tsur Y Solid State Ionics, 288, 322, 2016 |
8 |
Hybrid Organic-Inorganic Perovskites (HOIPs): Opportunities and Challenges Berry J, Buonassisi T, Egger DA, Hodes G, Kronik L, Loo YL, Lubomirsky I, Marder SR, Mastai Y, Miller JS, Mitzi DB, Paz Y, Rappe AM, Riess I, Rybtchinski B, Stafsudd O, Stevanovic V, Toney MF, Zitoun D, Kahn A, Ginley D, Cahen D Advanced Materials, 27(35), 5102, 2015 |
9 |
On the direction of the conductive filament growth in valence change memory devices during electroforming Kalaev D, Yalon E, Riess I Solid State Ionics, 276, 9, 2015 |
10 |
Determining the elementary steps of surface reactions by isotope exchange Riess I Solid State Ionics, 280, 51, 2015 |