Semiconducting-ionic membranes (SIMs) have exhibited significant superiority to replace the conventional ionic electrolytes in solid oxide fuel cells (SOFCs). One interesting phenomenon is that the SIMs can successfully avoid the underlying short-circuiting issue and power losses while bringing significantly enhanced power output. It is crucial to understand the physics in such devices as they show distinct electrochemical processes with conventional fuel cells. We first presented experimental studies of a SIM fuel cell based on a composite of semiconductor LiCo0.8Fe0.2O2 (LCF) and ionic conductor Sm-doped CeO2 (SDC), which achieved a remarkable power density of 1150 mW cm(-2) at 550 degrees C along with a high open circuit voltage (OCV) of 1.04 V. Then, for the first time we used a physical model via combining a semiconductor-ionic contact junction with a rectifying layer which blocks the electron leakage to describe such unique SIM device and excellent performance. Current and power are the most important characteristics for the device, by introducing the rectifying layer we described the SIM physical nature and new device process. This work presented a new view on advanced SIM SOFC science and technology from physics. (C) 2018 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.