검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Improving the design of gas diffusion layers for intermediate temperature polymer electrolyte fuel cells using a sensitivity analysis: A multiphysics approach Chandan A, Rees NV, Steinberger-Wilckens R, Self V, Richmond J International Journal of Hydrogen Energy, 40(46), 16745, 2015 |
| 2 |
A study into first and second order thermal transitions of materials using Spectral-DSC Ghita OR, Beard MA, McCabe J, Bottom R, Richmond J, Evans KE Journal of Materials Science, 43(14), 4988, 2008 |
| 3 |
4H-SiC DMOSFETs for high speed switching applications Ryu SH, Krishnaswami S, Das M, Richmond J, Agarwal A, Palmour J, Scofield J Materials Science Forum, 483, 797, 2005 |
| 4 |
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C Materials Science Forum, 483, 901, 2005 |
| 5 |
Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields Das MK, Sumakeris JJ, Hull BA, Richmond J, Krishnaswami S, Powell AR Materials Science Forum, 483, 965, 2005 |
| 6 |
SiCBJT technology for power switching and RF applications Agarwal A, Ryu SH, Capell C, Richmond J, Palmour J, Bartlow H, Chow P, Scozzie S, Tipton W, Baynes T, Jones K Materials Science Forum, 457-460, 1141, 2004 |
| 7 |
Development of 10 kV 4H-SiC power DMOSFETs Ryu SH, Agarwal A, Krishnaswami S, Richmond J, Palmour J Materials Science Forum, 457-460, 1385, 2004 |
| 8 |
Large-area (3.3 mm x 3.3 mm) power MOSFETs in 4H-SiC Ryu SH, Agarwal A, Richmond J, Das M, Lipkin L, Palmour J, Saks N, Williams J Materials Science Forum, 389-3, 1195, 2002 |