검색결과 : 30건
| No. | Article |
|---|---|
| 1 |
Facilitation of the thermochemical mechanism in NiO-based resistive switching memories via tip-enhanced electric fields Choi HH, Paik SH, Kim YJ, Kim MS, Kang YS, Lee SS, Jho JY, Park JH Journal of Industrial and Engineering Chemistry, 94, 233, 2021 |
| 2 |
Self-erasable titanium oxide resistive memory devices Jang JG, Choi HH, Kim MS, Kim JK, Chung SJ, Park JH Journal of Industrial and Engineering Chemistry, 78, 338, 2019 |
| 3 |
Dissipative particle dynamics simulation of phase separation in semiconducting/ferroelectric blend resistive films Weng JH, Xia W, Zhang J, Chen WB, Chen QS, Jiang YL, Cheng Q, Zhu GD Polymer, 116, 233, 2017 |
| 4 |
Steep sub-threshold current slope (similar to 2 mV/dec) Pt/Cu2S/Pt gated memristor with l(on)/I-off > 100 Mou NI, Zhang Y, Pai P, Tabib-Azar M Solid-State Electronics, 127, 20, 2017 |
| 5 |
Electrical properties of Molecular Beam Epitaxy grown Barium Titanate probed by conductive Atomic Force Microscopy Martin S, Baboux N, Albertini D, Gautier B Thin Solid Films, 642, 324, 2017 |
| 6 |
Role and Optimization of the Active Oxide Layer in TiO2-Based RRAM Regoutz A, Gupta I, Serb A, Khiat A, Borgatti F, Lee TL, Schlueter C, Torelli P, Gobaut B, Light M, Carta D, Pearce S, Panaccione G, Prodromakis T Advanced Functional Materials, 26(4), 507, 2016 |
| 7 |
Resistance switching properties of Cu2S film by electrochemical deposition Yan YM, Yang CP, Barner K, Marchenkov VV, Zeng Y Applied Surface Science, 360, 875, 2016 |
| 8 |
Printed non-volatile resistive switches based on zinc stannate (ZnSnO3) Ali S, Bae J, Lee CH Current Applied Physics, 16(7), 757, 2016 |
| 9 |
Modeling of diffusion mechanism of conductive channel oxidation in a Pt/NiO/Pt memory switching structure Sysun VI, Bute IV, Boriskov PP Solid-State Electronics, 123, 78, 2016 |
| 10 |
Resistive switching behavior of Ag/PMMA:Na/Ag devices for memory applications Tsao HY, Wang YW, Gao ZK Thin Solid Films, 612, 61, 2016 |