검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure Rong X, Wang XQ, Ivanov SV, Jiang XH, Chen G, Wang P, Wang WY, He CG, Wang T, Schulz T, Albrecht M, Jmerik VN, Toropov AA, Ratnikov VV, Kozlovsky VI, Martovitsky VP, Jin P, Xu FJ, Yang XL, Qin ZX, Ge WK, Shi JJ, Shen B Advanced Materials, 28(36), 7978, 2016 |
| 2 |
Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE Nechaev DV, Aseev PA, Jmerik VN, Brunkov PN, Kuznetsova YV, Sitnikova AA, Ratnikov VV, Ivanov SV Journal of Crystal Growth, 378, 319, 2013 |
| 3 |
Growth striations and dislocations in highly doped semiconductor single crystals Prokhorov IA, Serebryakov YA, Zakharov BG, Bezbakh IZ, Ratnikov VV, Shulpina IL Journal of Crystal Growth, 310(24), 5477, 2008 |
| 4 |
X-ray diffraction analysis of epigrowth on porous 4H-SiC substrates Shulpina IL, Savkina NS, Shuman VB, Ratnikov VV, Syvajarvi M, Yakimova R Materials Science Forum, 483, 265, 2005 |
| 5 |
Features of sublimation growth on porous SiC substrates: Characteristics and properties of porous and epitaxial layers Savkina NS, Shuman VB, Ratnikov VV, Rogachev AY, Lebedev AA Materials Science Forum, 433-4, 189, 2002 |
| 6 |
Role of the defects under porous silicon carbide formation Savkina NS, Sorokin LM, Hutchison JL, Sloan J, Tregubova AS, Mosina GN, Shuman VB, Ratnikov VV Applied Surface Science, 184(1-4), 252, 2001 |
| 7 |
Effect of sublimation growth on the structure of porous silicon carbide: SEM and X-ray diffraction investigations Savkina NS, Ratnikov VV, Shuman VB, Lebedev AA Materials Science Forum, 353-356, 119, 2001 |
| 8 |
Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties Mamutin VV, Shubina TV, Vekshin VA, Ratnikov VV, Toropov AA, Ivanov SV, Karlsteen M, Sodervall U, Willander M Applied Surface Science, 166(1-4), 87, 2000 |