SiC epitaxial layers were grown by vacuum sublimation on porous SiC substrates. The number of features such as an amorphization and the existence of big pores near the epitaxial layer concomitant this method is discussed. IR spectroscopy and PL confirmed structural perfection of growing epitaxial layers. The choice of the porous substrate is the key for the realization of high-quality overlayers. So, it is necessary knowledge how parameters of porous SiC depend on etching regimes and characteristics of the initial material.