화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Polytype stability and defects in differently doped bulk SiC
Schmitt E, Straubinger T, Rasp M, Vogel M, Wohlfart A
Journal of Crystal Growth, 310(5), 966, 2008
2 Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method
Straubinger TL, Bickermann M, Rasp M, Weingartner R, Wellmann PJ, Winnacker A
Materials Science Forum, 389-3, 131, 2002
3 PVT growth of p-type and semi-insulating 2-inch 6H-SiC crystals
Rasp M, Straubinger TL, Schmitt E, Bickermann M, Reshanov S, Sadowski H
Materials Science Forum, 433-4, 55, 2002
4 Anomalous interface shapes in the seed well during vertical gradient freeze growth of Si-doped GaAs
Rasp M, Birkmann B, Muller G
Journal of Crystal Growth, 222(1-2), 88, 2001
5 Defect reduction in sublimation grown silicon carbide crystals by adjustment of thermal boundary conditions
Schmitt E, Rasp M, Weber AD, Kolbl M, Eckstein R, Kadinski L, Selder M
Materials Science Forum, 353-356, 15, 2001
6 Study of boron incorporation during PVT growth of p-type SiC crystals
Bickermann M, Hofmann D, Rasp M, Straubinger TL, Weingartner R, Wellmann PJ, Winnacker A
Materials Science Forum, 353-356, 49, 2001
7 Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC
Weingartner R, Bickermann M, Hofmann D, Rasp M, Straubinger TL, Wellmann PJ, Winnacker A
Materials Science Forum, 353-356, 397, 2001
8 Growth of 3'' and 4'' gallium arsenide crystals by the vertical gradient freeze (VGF) method
Birkmann B, Rasp M, Stenzenberger J, Muller G
Journal of Crystal Growth, 211(1-4), 157, 2000