P-type and semi-insulating 2" 6H-SiC crystals exhibiting low resisitivity inhomogeneity are demonstrated. Resistivity mappings of Aluminium-doped SiC-wafers reveal a lateral mean deviation of only 5% and an axial variation of 30%. Room temperature mappings of Vanadium-doped SiC-wafers exhibit a resistivity of 3 x 10(11) Omegacm with a lateral mean deviation below 13%.