화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 A behavior-centered framework for real-time control and load-shedding using aggregated residential energy resources in distribution microgrids
Mammoli A, Robinson M, Ayon V, Martinez-Ramon M, Chen CF, Abreu JM
Energy and Buildings, 198, 275, 2019
2 An experimental method to merge far-field images from multiple longwave infrared sensors for short-term solar forecasting
Mammoli A, Terren-Serrano G, Menicucci A, Caudell TP, Martinez-Ramon M
Solar Energy, 187, 254, 2019
3 Advanced detection of HVAC faults using unsupervised SVM novelty detection and Gaussian process models
Van Every PM, Rodriguez M, Jones CB, Mammoli AA, Martinez-Ramon M
Energy and Buildings, 149, 216, 2017
4 Post-treatment of fish canning effluents by sequential nitrification and autotrophic denitrification processes
Carmen F, Anuska MC, Luis CJ, Ramon M
Process Biochemistry, 48(9), 1368, 2013
5 The role of substituents on functionalized 1,10-phenanthroline in controlling the emission properties of cationic iridium(III) complexes of interest for electroluminescent devices
Dragonetti C, Falciola L, Mussini P, Righetto S, Roberto D, Ugo R, Valore A, De Angelis F, Fantacci S, Sgamellotti A, Ramon M, Muccini M
Inorganic Chemistry, 46(21), 8533, 2007
6 Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD
Triyoso DH, Ramon M, Hegde RI, Roan D, Garcia R, Baker J, Wang XD, Fejes P, White BE, Tobin PJ
Journal of the Electrochemical Society, 152(3), G203, 2005
7 Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2
Triyoso D, Liu R, Roan D, Ramon M, Edwards NV, Gregory R, Werho D, Kulik J, Tam G, Irwin E, Wang XD, La LB, Hobbs C, Garcia R, Baker J, White BE, Tobin P
Journal of the Electrochemical Society, 151(10), F220, 2004
8 Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
Triyoso DH, Hegde RI, Grant J, Fejes P, Liu R, Roan D, Ramon M, Werho D, Rai R, La LB, Baker J, Garza C, Guenther T, White BE, Tobin PJ
Journal of Vacuum Science & Technology B, 22(4), 2121, 2004
9 HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium
Schaeffer J, Edwards NV, Liu R, Roan D, Hradsky B, Gregory R, Kulik J, Duda E, Contreras L, Christiansen J, Zollner S, Tobin P, Nguyen BY, Nieh R, Ramon M, Rao R, Hegde R, Rai R, Baker J, Voight S
Journal of the Electrochemical Society, 150(4), F67, 2003