Film characteristics of HfO2 gate dielectrics formed on Si(100) by atomic layer deposition (ALD) or inetallorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy, transmission electron microscopy, secondary ion mass spectroscopy (SIMS), X-ray reflectometry, ellipsometry, and electrical measurements. HfCl4 and water were the precursors used for ALD HfO2 deposition at 300 and 370 degrees C, whereas C16H36HfO4 was used for MOCVD deposition at 550 and 650 degrees C. Film thickness increases linearly with time for both deposition techniques. The ALD and MOCVD films have comparable density. MOCVD thin films are polycrystalline, while the 300 degrees C deposited ALD HfO2 are amorphous. The 370 degrees C deposited ALD HfO2 are polycrystalline. SIMS analysis indicated chlorine and carbon are the major contaminants in ALD and MOCVD HfO2 films, respectively. Electrical properties of ALD and MOCVD HfO2 films were examined using Metal oxide silicon capacitors. Wellbehaved capacitance-voltage and leakage current-voltage characteristics were obtained for both types of films. ALD films have slightly higher capacitance and comparable leakage when compared to MOCVD films. Room temperature and 105 degrees C stressing of the capacitance-voltage curves showed a significant shift in the capacitance-voltage curve indicating that charge trapping was observed for all films with the 650 degrees C deposited MOCVD showing the largest capacitance-voltage shift. Unlike MOCVD films, the capacitance-voltage characteristics of ALD films remain well behaved after stressing. (c) 2005 The Electrochemical Society. [DOI: 10.1149/1.1857791] All rights reserved.