검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash Zhang Y, Jin L, Jiang DD, Zou XQ, Zhao ZG, Gao J, Zeng M, Zhou WB, Tang ZY, Huo ZL Solid-State Electronics, 141, 18, 2018 |
| 2 |
A scaling scenario of asymmetric coding to reduce both data retention and program disturbance of NAND flash memories Doi M, Tanakamaru S, Takeuchi K Solid-State Electronics, 92, 63, 2014 |
| 3 |
A 1.0 V power supply, 9.3 GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD Miyaji K, Node S, Hatanaka T, Takahashi M, Sakai S, Takeuchi K Solid-State Electronics, 58(1), 34, 2011 |
| 4 |
The split-gate flash memory with an extra select gate for automotive applications Tsair YS, Fang YK, Wang YH, Chu WT, Hsieh CT, Lin YT, Wang CS, Wong MR, Lee S, Smolen R, Liu B Solid-State Electronics, 53(10), 1059, 2009 |
| 5 |
Reliability implications in advanced embedded two-transistor-Fowler-Nordheim-NOR flash memory devices Scarpa A, Tao G, Dijkstra J, Kuper FG Solid-State Electronics, 46(11), 1765, 2002 |