In this paper, novel split-gate flash memory with an extra select gate (ESG) to improve the operation window has been investigated in details. Experimental results show that with the ESG (called 2.5T cell), the cell showed a better program wordline disturb window than that of the traditional split-gate flash memory cells (called 1.5T cell) around 0.5 V (at V-s = 10 V). The offset of minimum drain voltage to avoid punch through disturb between without and with wordline stress for 2.5T cell and 1.5T cell are around 0.05 V and 0.2 V, respectively. We attribute these improvements in wordline disturb behaviors to the reduction of channel leakage current with the addition of ESG. During the erase stage, the gate oxide of the ESG suffers free stress, thus having better oxide integrity to resist the generation of channel leakage current. In addition, the ESG offers a reverse bias to retard the leakage current from drain to source. (C) 2009 Elsevier Ltd. All rights reserved.