검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Large area SiC epitaxial layer growth in a warm-wall planetary VPE reactor Burk AA, O'Loughlin MJ, Paisley MJ, Powell AR, Brady MF, Leonard RT, Muller S, Allen ST Materials Science Forum, 483, 137, 2005 |
| 2 |
Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields Das MK, Sumakeris JJ, Hull BA, Richmond J, Krishnaswami S, Powell AR Materials Science Forum, 483, 965, 2005 |
| 3 |
Silicon carbide crystal and substrate technology: A survey of recent advances Hobgood HM, Brady MF, Calus MR, Jenny JR, Leonard RT, Malta DP, Muller SG, Powell AR, Tsvetkov VF, Glass RC, Carter CH Materials Science Forum, 457-460, 3, 2004 |
| 4 |
Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices Jenny JR, Malta DP, Calus MR, Muller SG, Powell AR, Tsvetkov VF, Hobgood HM, Glass RC, Carter CH Materials Science Forum, 457-460, 35, 2004 |
| 5 |
Large diameter 4H-SiC substrates for commercial power applications Powell AR, Leonard RT, Brady MF, Muller SG, Tsvetkov VF, Trussell R, Sumakeris JJ, Hobgood HM, Burk AA, Glass RC, Carter CH Materials Science Forum, 457-460, 41, 2004 |
| 6 |
Sublimation-grown semi-insulating SIC for high frequency devices Muller SG, Brady MF, Brixius WH, Glass RC, Hobgood HM, Jenny JR, Leonard RT, Malta DP, Powell AR, Tsvetkov VF, Allen ST, Palmour JW, Carter CH Materials Science Forum, 433-4, 39, 2002 |