The SiC power device market is predicted to grow exponentially in the next few years. in the development of substrates for this emerging commercial market, it is imperative to develop the product to meet the needs of the targeted application. In this paper we will discuss the status and requirements for SiC substrates for power devices such as Schottky and PiN diodes. For example, for the SiC Schottky device where current production is approaching 50 amp devices, there are several substrate material aspects that are key. These include: wafer diameter (3-inch and 100 mm), micropipe density (<1cm(-2) for 3-inch substrates and as low as 30cm(-2) for 100-mm substrates), dislocation density, and wafer cost.