검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP Journal of Vacuum Science & Technology B, 25(1), 217, 2007 |
| 2 |
Benefits of high-k dielectrics in 4H-SIC trench MOSFETs Wright NG, Poolamai N, Vassilevski K, Horsfall AB, Johnson CM Materials Science Forum, 457-460, 1433, 2004 |