검색결과 : 28건
No. | Article |
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1 |
Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing Abi-Tannous T, Soueidan M, Ferro G, Lazar M, Toury B, Beaufort MF, Barbot JF, Penuelas J, Planson D Applied Surface Science, 347, 186, 2015 |
2 |
Understanding the growth of p-doped 4H-SiC layers using vapour-liquid-solid transport Vo-Ha A, Carole D, Lazar M, Tournier D, Cauwet F, Souliere V, Thierry-Jebali N, Brosselard P, Planson D, Brylinski C, Ferro G Thin Solid Films, 548, 125, 2013 |
3 |
Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE Dheilly N, Planson D, Pagues G, Scharnholz S Solid-State Electronics, 73, 32, 2012 |
4 |
4H-silicon carbide thin junction based ultraviolet photodetectors Biondo S, Lazar M, Ottaviani L, Vervisch W, Le Borgne V, El Khakani MA, Duchaine J, Milesi F, Palais O, Planson D Thin Solid Films, 522, 17, 2012 |
5 |
Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) Lefranc P, Planson D, Morel H, Bergogne D Solid-State Electronics, 53(9), 944, 2009 |
6 |
Edge termination strategies for a 4 kV 4H-SiC thyristor Brosselard P, Planson D, Scharnholz S, Raynaud C, Zorngiebel V, Lazar M, Chante JP, Spahn E Solid-State Electronics, 50(7-8), 1183, 2006 |
7 |
P-type SiC layers formed by VLS induced selective epitaxial growth Lazar M, Jacquier C, Dubois C, Raynaud C, Ferro G, Planson D, Brosselard P, Monteil Y, Chante JP Materials Science Forum, 483, 633, 2005 |
8 |
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E Materials Science Forum, 483, 1005, 2005 |
9 |
SiC-based current limiter devices Chante JP, Tournier D, Planson D, Raynaud C, Lazar M, Locatelli ML, Brosselard P Materials Science Forum, 457-460, 951, 2004 |
10 |
On-chip temperature monitoring of a SiC current limiter Tournier D, Godignon P, Millan J, Planson D, Chante JP, Sarrus F, de Palma JF Materials Science Forum, 457-460, 1021, 2004 |