High voltage and high current potentiality of SiC based devices has been proved, and various devices able to work at high temperature have been reported as well. Nevertheless, packaging is one of the main constrains for high temperature operation of these devices. Up to date, no specific power package has been reported for high temperature operation. Moreover, it is desirable to predict the SiC die temperature to avoid any related failure in order to improve the efficiency of the packaged SiC device. This paper deals with an integrated temperature sensor for SiC current limiting devices. The current limiter is based on a VJFET structure, which capability for dissipating high power density (140 kW/cm(2)), in the limiting state, has been previously demonstrated [2]. Carrier mobility dependence,with temperature was extracted from cryogenic measurements. The temperature estimation is based on the measurement of the variation of the electrical resistance (caused by mobility variation) of the sensing device integrated with the current limiter. In this paper we will first describe the temperature estimation methodology using various technological solution (from metallic resistor solution to the SiC integrated sensor). Then experimental temperature measurements using an integrated SiC sensor within a packaged current limiting devices will be presented. Electro-thermal measurements on the fabricated devices show that the current limiter is able to work at 205degreesC under steady state conditions (320 V), without degrading their electrical performances. Finally, perspectives in terms of integration and reliability will be proposed.