검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges Khazaka R, Bogumilowicz Y, Rouchon D, Boutry H, Chalupa Z, Lapras V, Previtali B, Chevalier N, Papon AM, David S, Maitrejean S Applied Surface Science, 445, 77, 2018 |
| 2 |
Investigation of charge-trap memories with AlN based band engineered storage layers Molas G, Colonna JP, Kies R, Belhachemi D, Bocquet M, Gely M, Vidal V, Brianceau P, Martinez E, Papon AM, Licitra C, Vandroux L, Ghibaudo G, De Salvo B Solid-State Electronics, 58(1), 68, 2011 |
| 3 |
Fully depleted silicon on insulator MOSFETs on (110) surface for hybrid orientation technologies Signamarcheix T, Andrieu F, Biasse B, Casse M, Papon AM, Nolot E, Ghyselen B, Faynot O, Clavelier L Solid-State Electronics, 59(1), 8, 2011 |
| 4 |
Mechanism of Thermal Silicon Oxide Direct Wafer Bonding Ventosa C, Morales C, Libralesso L, Fournel F, Papon AM, Lafond D, Moriceau H, Penot JD, Rieutord F Electrochemical and Solid State Letters, 12(10), H373, 2009 |
| 5 |
Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111) Destefanis V, Hartmann JM, Abbadie A, Papon AM, Billon T Journal of Crystal Growth, 311(4), 1070, 2009 |
| 6 |
Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices Hartmann JM, Papon AM, Barnes JP, Billon T Journal of Crystal Growth, 311(11), 3152, 2009 |
| 7 |
Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111) Hartmann JM, Papon AM, Destefaniz V, Billon T Journal of Crystal Growth, 310(24), 5287, 2008 |
| 8 |
High-temperature growth of very high germanium content SiGe virtual substrates Bogumilowicz Y, Hartmann JM, Di Nardo C, Holliger P, Papon AM, Rolland G, Billon T Journal of Crystal Growth, 290(2), 523, 2006 |
| 9 |
A two steps CVD process for the growth of silicon nano-crystals Mazen F, Baron T, Papon AM, Truche R, Hartmann JM Applied Surface Science, 214(1-4), 359, 2003 |
| 10 |
Reduced pressure-chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 mu m photo-detection Masarotto L, Hartmann JM, Bremond G, Rolland G, Papon AM, Semeria MN Journal of Crystal Growth, 255(1-2), 8, 2003 |