검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Analytical expressions for subthreshold swing in FDSOI MOS structures Ghibaudo G, Pananakakis G Solid-State Electronics, 149, 57, 2018 |
| 2 |
Impact of Blend Morphology on Interface State Recombination in Bulk Heterojunction Organic Solar Cells Bouthinon B, Clerc R, Vaillant J, Verilhac JM, Faure-Vincent J, Djurado D, Ionica I, Man G, Gras A, Pananakakis G, Gwoziecki R, Kahn A Advanced Functional Materials, 25(7), 1090, 2015 |
| 3 |
Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes Dutta T, Rafhay Q, Clerc R, Lacord J, Monfray S, Pananakakis G, Boeuf F, Ghibaudo G Solid-State Electronics, 88, 43, 2013 |
| 4 |
Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Ghibaudo G, Collaert N, Pananakakis G Solid-State Electronics, 57(1), 31, 2011 |
| 5 |
On the accuracy of current TCAD hot carrier injection models in nanoscale devices Zaka A, Rafhay Q, Iellina M, Palestri P, Clerc R, Rideau D, Garetto D, Dornel E, Singer J, Pananakakis G, Tavernier C, Jaouen H Solid-State Electronics, 54(12), 1669, 2010 |
| 6 |
Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories Bocquet M, Molas G, Perniola L, Garros X, Buckley J, Gely M, Colonna JP, Grampeix H, Martin F, Vidal V, Toffoli A, Deleonibus S, Ghibaudo G, Pananakakis G, De Salvo B Solid-State Electronics, 53(7), 786, 2009 |
| 7 |
Impact of channel orientation on ballistic current of nDGFETs with alternative channel materials Rafhay Q, Clerc R, Ferrier M, Pananakakis G, Ghibaudo G Solid-State Electronics, 52(4), 540, 2008 |
| 8 |
Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs Rafhay Q, Clerc R, Ghibaudo G, Pananakakis G Solid-State Electronics, 52(10), 1474, 2008 |
| 9 |
Modeling and optimization of series resistance of planar MIM capacitors Bajolet A, Clerc R, Pananakakis G, Picollet E, Segura N, Boret S, Bruyere S, Manceau JP, Giraudin JC, Delpech P, Montes L, Ghibaudo G Solid-State Electronics, 50(7-8), 1244, 2006 |
| 10 |
Influence of dots size and dots number fluctuations on the electrical characteristics of multi-nanocrystal memory devices Perniola L, Salvo BD, Ghibaudo G, Para AF, Pananakakis G, Baron T, Lombardo S Solid-State Electronics, 47(10), 1637, 2003 |