| 1 |
Source of boron and phosphorus impurities in the silicon wiresawing slurry and their removal by acid leaching
Liu SN, Huang K, Zhu HM
Separation and Purification Technology, 172, 113, 2017 |
| 2 |
Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments
Byun HJ, Lee JC, Yang H
Journal of Colloid and Interface Science, 355(1), 35, 2011 |
| 3 |
Synthesis of SAPO-41 from a new reproducible route using H3PO3 as the phosphorus source and its application in hydroisomerization of n-decane
Ma YF, Li N, Ren XT, Xiang SH, Guan NJ
Journal of Molecular Catalysis A-Chemical, 250(1-2), 9, 2006 |
| 4 |
Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition source
Postigo PA, Lullo G, Choy KH, Fonstad CG
Journal of Vacuum Science & Technology B, 17(3), 1281, 1999 |
| 5 |
Solid source molecular beam epitaxial growth of In0.5Ga0.5P pseudomorphic high electron mobility transistor structures
Hoke WE, Lemonias PJ, Beaudoin RM, Torabi A
Journal of Vacuum Science & Technology B, 16(3), 1408, 1998 |
| 6 |
Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy
Hoke WE, Lemonias PJ, Torabi A
Journal of Vacuum Science & Technology B, 16(6), 3041, 1998 |
| 7 |
All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors
Pessa M, Toivonen M, Jalonen M, Savolainen P, Salokatve A
Thin Solid Films, 306(2), 237, 1997 |
| 8 |
Solid Source Molecular-Beam Epitaxy of Low-Threshold 1.55 Mu-M Wavelength GaInAs/GaInAsP/InP Semiconductor-Lasers
Johnson FG, King O, Seiferth F, Stone DR, Whaley RD, Dagenais M, Chen YJ
Journal of Vacuum Science & Technology B, 14(4), 2753, 1996 |
