검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
High-quality SiC bulk single crystal growth based on simulation and experiment Nishizawa SI, Kato T, Kitou Y, Oyanagi N, Hirose F, Yamaguchi H, Bahng W, Arai K Materials Science Forum, 457-460, 29, 2004 |
| 2 |
Large diameter and long length growth of SiC single crystal Kato T, Ohno T, Hirose F, Oyanagi N, Nishizawa S, Arai K Materials Science Forum, 457-460, 99, 2004 |
| 3 |
Fabrication of mesa-type pn diodes without forward degradation on ultara-high-quality 6H-SiC substrate Tanaka Y, Ohno T, Oyanagi N, Nishizawa S, Suzuki T, Fukuda K, Yatsuo T, Arai K Materials Science Forum, 457-460, 1009, 2004 |
| 4 |
Numerical simulation of heat and mass transfer in SiC sublimation growth Nishizawa S, Kato T, Kitou Y, Oyanagi N, Arai K Materials Science Forum, 389-3, 43, 2002 |
| 5 |
Characterization of inclusions in SiC bulk crystals grown by modified Lely method Hirose F, Kitou Y, Oyanagi N, Kato T, Nishizawa S, Arai K Materials Science Forum, 389-3, 75, 2002 |
| 6 |
Growth 3nd evaluation of high quality SiC crystal by sublimation method Oyanagi N, Yamaguchi H, Kato T, Nishizawa S, Arai K Materials Science Forum, 389-3, 87, 2002 |
| 7 |
A method of reducing micropipes in thin films by using sublimation growth Oyanagi N, Nishizawa S, Arai K Materials Science Forum, 389-3, 107, 2002 |
| 8 |
Dislocation constraint by etch-back process of seed crystal in SiC bulk crystal growth Kato T, Oyanagi N, Kitou Y, Nishizawa S, Arai K Materials Science Forum, 389-3, 111, 2002 |
| 9 |
Spatial mapping of the carrier concentration and mobility in SiC wafers by micro Fourier-transform infrared spectroscopy Yaguchi H, Narita K, Hijikata Y, Yoshida S, Nakashima S, Oyanagi N Materials Science Forum, 389-3, 621, 2002 |
| 10 |
Stress analysis of SiC bulk single crystal growth by sublimation method Nishizawa SIC, Michikawa Y, Kato T, Hirose F, Oyanagi N, Arai K Materials Science Forum, 433-4, 13, 2002 |