Micro Fourier-trans form infrared (FTIR) spectroscopy has been used to investigate the spatial distribution of the carrier concentration and mobility in SiC wafers. The carrier concentration and mobility were independently derived from the reflectance spectra based on the dielectric function taking into account the effect of phonons and plasmons. The carrier concentration profile obtained for an intentionally inhomogeneous N-doped 6H-SiC wafer coincides well with the spatial distribution of color in the wafer. For commercially available wafers, carrier concentrations are found to increase with approaching the center of the wafers. These results demonstrate that micro FTIR is a nondestructive and noncontact technique to spatially characterize the carrier concentration and mobility in SiC wafers.