| 1 |
Preparation and decomposition activity of MnOx-modified (Ce-0.73, Bi-0.27) O2-delta on 2-naphthol in water in the dark or under visible light
Otsuka N, Isobe T, Matsushita S, Nakajima A
Materials Chemistry and Physics, 233, 346, 2019 |
| 2 |
Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
Mohamed MA, Lam PT, Otsuka N
Journal of Crystal Growth, 378, 329, 2013 |
| 3 |
Non-Dissociative Adsorption of Carbonaceous Gases on Ni Containing Group-13, 14, and 15 Elements
Nishiyama Y, Moriguchi K, Otsuka N
Journal of the Electrochemical Society, 158(12), C403, 2011 |
| 4 |
Existence of localized spins in pair delta-doped GaAs structures
Noh JP, Idutsu Y, Otsuka N
Journal of Crystal Growth, 301, 662, 2007 |
| 5 |
Percolation transition via quantum point contacts in Be delta-doped GaAs structures grown by molecular beam epitaxy
Shimogishi F, Noh JP, Idutsu Y, Otsuka N
Journal of Crystal Growth, 301, 666, 2007 |
| 6 |
A necessary and sufficient condition for parameter insensitive disturbance-rejection problem with state feedback
Otsuka N
Automatica, 42(3), 447, 2006 |
| 7 |
Selective 6-endo cyclization of the acyl radicals onto the nitrogen of imine and oxazoline C-N bonds
Tojino M, Otsuka N, Fukuyama T, Matsubara H, Ryu I
Journal of the American Chemical Society, 128(24), 7712, 2006 |
| 8 |
Electrical transport properties of GaAs structures with a pair of Be and donor impurity delta-doped layers
Idutsu Y, Shimogishi F, Noh JP, Otsuka N
Journal of Vacuum Science & Technology B, 24(1), 157, 2006 |
| 9 |
Direct correlation of negative magnetoresistance with concentrations of localized holes in Be delta-doped GaAs structures
Noh JP, Iwasaki S, Jung DW, Islam AZMT, Otsuka N
Journal of Vacuum Science & Technology B, 24(6), 2560, 2006 |
| 10 |
In situ growth-stress measurement of Cr(2)O(3) scale formed on stainless steels by Raman spectroscopy
Kitamura K, Nishiyama Y, Otsuka N, Kudo T
Materials Science Forum, 522-523, 489, 2006 |
