검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Field Effect Mobility in n-channel Si face 4H-SiC MOSFET with Gate oxide Grown on Aluminium Ion-implanted Material Gudjonsson G, Olafsson HO, Allerstam F, Nilsson PA, Sveinbjornsson EO, Rodle T, Jos R Materials Science Forum, 483, 833, 2005 |
| 2 |
High Field-Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment Allerstam F, Gudjonsson G, Olafsson HO, Sveinbjornsson EO, Rodle T, Jos R Materials Science Forum, 483, 837, 2005 |
| 3 |
High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material Sveinbjornsson EO, Olafsson HO, Gudjonsson G, Allerstam F, Nilsson PA, Syvajarvi M, Yakimova R, Hallin C, Rodle T, Jos R Materials Science Forum, 483, 841, 2005 |
| 4 |
Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC Rudenko TE, Osiyuk IN, Tyagulski IP, Olafsson HO, Sveinbjornsson EO Solid-State Electronics, 49(4), 545, 2005 |
| 5 |
A comparison between SiO2/4H-SiC interface traps on (0001) and (1120) faces Olafsson HO, Hallin C, Sveinbjornsson EO Materials Science Forum, 457-460, 1305, 2004 |
| 6 |
Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O) Gudjonsson G, Olafsson HO, Sveinbjornsson EO Materials Science Forum, 457-460, 1425, 2004 |
| 7 |
New evidence of interfacial oxide traps in n-type 4H-and 6H-SiC MOS structures Olafsson HO, Sveinbjornsson EO, Rudenko TE, Kilchytska VI, Tyagulski IP, Osiyuk IN Materials Science Forum, 389-3, 1001, 2002 |
| 8 |
On shallow interface states in n type 4H-SiC metal-oxide-semiconductor structures Olafsson HO, Allerstam F, Sveinbjornsson EO Materials Science Forum, 389-3, 1005, 2002 |
| 9 |
Positron annihilation studies of defects at the SiO2/SiC interface Dekker J, Saarinen K, Olafsson HO, Sveinbjornsson EO Materials Science Forum, 433-4, 543, 2002 |
| 10 |
A study of the shallow electron traps at the 4H-SiC/SiO2 interface Olafsson HO, Sveinbjornsson EO, Rudenko TE, Kilchytska VI, Tyagulski IP, Osiyuk IN Materials Science Forum, 433-4, 547, 2002 |