Lateral inversion channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were manufactured on 6H-SiC and two gate oxidation recipes were compared. In one case the gate oxide was grown in N2O using quartz environment. The resulting peak field-effect mobility was μ(FE)=43 cm(2)/Vs. In the other case the gate oxide was grown in oxygen using alumina environment and the resulting peak field-effect mobility was μ(FE)=130 cm(2)/Vs. Oxidizing in an environment made from sintered alumina introduces contaminants into the oxide that effect the oxidation in several ways. The oxidation rate is increased and the resulting SiC/SiO2 interface allows higher inversion channel mobility.