| 1 |
Influence of the barrier composition in GaN/In chi Al1-chi N quantum wells properties
Kriouche N, Watanabe A, Oda O, Egawa T
Journal of Crystal Growth, 390, 51, 2014 |
| 2 |
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N-2/H-2 excited plasma - effect of TMG flow rate and VHF power
Lu Y, Kondo H, Ishikawa K, Oda O, Takeda K, Sekine M, Amano H, Hori M
Journal of Crystal Growth, 391, 97, 2014 |
| 3 |
A novel method of hydrogen generation by water electrolysis using an ultra-short-pulse power supply
Shimizu N, Hotta S, Sekiya T, Oda O
Journal of Applied Electrochemistry, 36(4), 419, 2006 |
| 4 |
High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators
Shimizu N, Miyoshi M, Tange S, Sekiya T, Ito T, Sakuma T, Sakurai T, Terasawa T, Hatano M, Hotta S, Imanishi Y, Okimoto A, Asai M, Oda O, Nishizawa J
Solid-State Electronics, 50(9-10), 1567, 2006 |
| 5 |
Investigation of boron diffusion into silicon using a liquid boron tribromide source and its application to buried-gate-type static-induction thyristors
Miyoshi M, Shimizu N, Imanishi Y, Oda O, Nishizawa J
Journal of the Electrochemical Society, 152(8), G601, 2005 |
| 6 |
MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates
Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M, Oda O
Journal of Crystal Growth, 272(1-4), 293, 2004 |
| 7 |
Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE
Sakai M, Ishikawa H, Egawa T, Jimbo T, Umeno M, Shibata T, Asai K, Sumiya S, Kuraoka Y, Tanaka M, Oda O
Journal of Crystal Growth, 244(1), 6, 2002 |
| 8 |
Growth of bulk GaN single crystals by the pressure-controlled solution growth method
Inoue T, Seki Y, Oda O, Kurai S, Yamada Y, Taguchi T
Journal of Crystal Growth, 229(1), 35, 2001 |
| 9 |
Microscopic photoluminescence evaluation of bright spots in Fe-doped InP wafers
Wakahara M, Uchida M, Warashina M, Oda O, Tajima M
Journal of Crystal Growth, 210(1-3), 226, 2000 |
| 10 |
ZnTe pure green light-emitting diodes fabricated by thermal diffusion
Sato K, Hanafusa M, Noda A, Arakawa A, Uchida M, Asahi T, Oda O
Journal of Crystal Growth, 214, 1080, 2000 |
