Gallium nitride (GaN) films have been grown by using our newly developed Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) system This system has three features: (1) application of very high frequency (60 MHz) power in order to increase the plasma density, (2) introduction of H-2 gas together with N-2 gas in the plasma discharge region to generate not only nitrogen radicals but also active NHx molecules, and (3) radical supply under remote plasma arrangement with suppression of charged ions and photons by employing a Faraday cage. Using this new system, we have studied the effect of the trimethylgallium (TMG) source now rate and of the plasma generation power on the GaN crystal quality by using scanning electron microscopy (SEM) and double crystal X-ray diffraction (XRD). We found that this REMOCVD allowed the growth of epitaxial GaN films of the wurtzite structure of (0001) orientation on sapphire substrates with a high growth rate of 0.42 mu m/h at a low temperature of 800 degrees C. The present REMOCVD is a promising method for GaN growth at relatively low temperature and without using costly ammonia gas. (C) 2014 Elsevier B.V. All rights reserved.