검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps Bassim ND, Twigg ME, Mastro MA, Eddy CR, Zega TJ, Henry RL, Culbertson JC, Holm RT, Neudeck P, Powell JA, Trunek AJ Journal of Crystal Growth, 304(1), 103, 2007 |
| 2 |
Effect of contact geometry on 4H-SiC rectifiers with junction termination extension Nigam S, Kim J, Luo B, Ren F, Chung GY, Pearton SJ, Williams JR, Shenai K, Neudeck P Solid-State Electronics, 47(1), 57, 2003 |
| 3 |
Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers Nigam S, Kim J, Luo B, Ren F, Chung GY, Pearton SJ, Williams JR, Shenai K, Neudeck P Solid-State Electronics, 47(1), 61, 2003 |
| 4 |
Synchrotron white-beam topographic studies of 2H-SiC crystals Vetter WM, Huang W, Neudeck P, Powell JA, Dudley M Journal of Crystal Growth, 224(3-4), 269, 2001 |
| 5 |
Synchrotron white beam topography studies of 2H SiC crystals Dudley M, Huang W, Vetter WM, Neudeck P, Powell JA Materials Science Forum, 338-3, 465, 2000 |
| 6 |
Synchrotron white beam x-ray topography and atomic force microscopy studies of a 540R-SiC Lely platelet Vetter WM, Dudley M, Huang W, Neudeck P, Powell JA Materials Science Forum, 338-3, 469, 2000 |
| 7 |
Defect modeling and simulation of 4-H SiCP-N diode Keskar N, Shenai K, Neudeck P Materials Science Forum, 338-3, 1351, 2000 |