P-i-n 4H-SiC rectifiers with SiO2 passivated mesa edge termination showed forward current characteristics dominated by recombination at low bias (n similar to 1.97) and diffusion at high voltages (n similar to 1.1). The forward turn-on voltage was similar to4 V, with a specific on-state resistance of 15 mOmega cm(2), on/off current ratio of 1.5 x 10(5) at 3 V/-450 V and figure-of-merit, V-B(2)/R-ON, of 13.5 MW cm(-2). The mesa extension distance did not have a strong impact on reverse breakdown voltage. (C) 2002 Elsevier Science Ltd. All rights reserved.