검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory Guy J, Molas G, Vianello E, Carabasse C, Blaise P, Bernard M, Souchier E, Francois P, Aussenac F, Delaye V, Clermidy F, De Salvo B Thin Solid Films, 563, 15, 2014 |
| 2 |
Push the flash floating gate memories toward the future low energy application Della Marca V, Just G, Regnier A, Ogier JL, Simola R, Niel S, Postel-Pellerin J, Lalande F, Masoero L, Molas G Solid-State Electronics, 79, 210, 2013 |
| 3 |
On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories Longnos F, Vianello E, Cagli C, Molas G, Souchier E, Blaise P, Carabasse C, Rodriguez G, Jousseaume V, De Salvo B, Dahmani F, Verrier P, Bretegnier D, Liebault J Solid-State Electronics, 84, 155, 2013 |
| 4 |
Investigation of charge-trap memories with AlN based band engineered storage layers Molas G, Colonna JP, Kies R, Belhachemi D, Bocquet M, Gely M, Vidal V, Brianceau P, Martinez E, Papon AM, Licitra C, Vandroux L, Ghibaudo G, De Salvo B Solid-State Electronics, 58(1), 68, 2011 |
| 5 |
Modeling of program, erase and retention characteristics of charge-trap gate all around memories Nowak E, Perniola L, Ghibaudo G, Molas G, Reimbold G, De Salvo B, Boulanger F Solid-State Electronics, 58(1), 75, 2011 |
| 6 |
Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories Bocquet M, Molas G, Perniola L, Garros X, Buckley J, Gely M, Colonna JP, Grampeix H, Martin F, Vidal V, Toffoli A, Deleonibus S, Ghibaudo G, Pananakakis G, De Salvo B Solid-State Electronics, 53(7), 786, 2009 |
| 7 |
Capacitance measurements in nanometric silicon devices using Coulomb blockade Hofheinz M, Jehl X, Sanquer M, Cueto O, Molas G, Vinet M, Deleonibus S Solid-State Electronics, 51(4), 560, 2007 |
| 8 |
Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories Molas G, Bocquet M, Buckley J, Grampeix H, Gely M, Colonna JP, Licitra C, Rochat N, Veyront T, Garros X, Martin F, Brianceau P, Vidal V, Bongiorno C, Lombardo S, De Salvo B, Deleonibus S Solid-State Electronics, 51(11-12), 1540, 2007 |
| 9 |
Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics Deleruyelle D, Molas G, DeSalvo B, Gely M, Lafond D Solid-State Electronics, 49(11), 1728, 2005 |
| 10 |
Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory Molas G, De Salvo B, Mariolle D, Ghibaudo G, Toffoli A, Buffet N, Deleonibus S Solid-State Electronics, 47(10), 1645, 2003 |