검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors Kotamraju S, Krishnan B, Melnychuk G, Koshka Y Journal of Crystal Growth, 312(5), 645, 2010 |
| 2 |
Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC Das H, Melnychuk G, Koshka Y Journal of Crystal Growth, 312(12-13), 1912, 2010 |
| 3 |
Epitaxial growth of 4H-SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation Koshka Y, Lin HD, Melnychuk G, Wood C Journal of Crystal Growth, 294(2), 260, 2006 |
| 4 |
Homoepitaxial growth of 4H-SiC using CH3Cl carbon precursor Koshka Y, Lin HD, Melnychuk G, Mazzola MS, Wyatt JL Materials Science Forum, 483, 81, 2005 |
| 5 |
Experimental investigation and simulation of silicon droplets formation during SiCCVD epitaxial growth Melnychuk G, Koshka Y, Mazzola MS, Wyatt JL Materials Science Forum, 483, 105, 2005 |
| 6 |
Improved resolution of epitaxial thin film doping using FTIR reflectance spectroscopy Mazzola MS, Sunkari SG, Mazzola JP, Das H, Melnychuk G, Koshka Y, Wyatt JL, Zhang J Materials Science Forum, 483, 397, 2005 |
| 7 |
Computational modeling for the development of CVD SiC epitaxial growth processes Melnychuk G, Koshka Y, Yingquan S, Mazzola M, Pittman CU Materials Science Forum, 433-4, 177, 2002 |
| 8 |
Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates Kuznetsov NI, Mynbaeva MG, Melnychuk G, Dmitriev VA, Saddow SE Applied Surface Science, 184(1-4), 483, 2001 |