검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Optimisation and scaling of interfacial GeO2 layers for high-kappa gate stacks on germanium and extraction of dielectric constant of GeO2 Murad SNA, Baine PT, McNeill DW, Mitchell SJN, Armstrong BM, Modreanu M, Hughes G, Chellappan RK Solid-State Electronics, 78, 136, 2012 |
| 2 |
Germanium on sapphire by wafer bonding Baine PT, Gamble HS, Armstrong BM, McNeill DW, Mitchell SJN, Low YH, Rainey PV Solid-State Electronics, 52(12), 1840, 2008 |
| 3 |
Silicon-on-insulator substrates with buried tungsten silicide layer Gamble HS, Armstrong BM, Baine P, Bain M, McNeill DW Solid-State Electronics, 45(4), 551, 2001 |
| 4 |
Comparison of Si1-Ycy Films Produced by Solid-Phase Epitaxy and Rapid Thermal Chemical-Vapor-Deposition Ray SK, Mcneill DW, Gay DL, Maiti CK, Armstrong GA, Armstrong BM, Gamble HS Thin Solid Films, 294(1-2), 149, 1997 |